IRF7452 International Rectifier, IRF7452 Datasheet - Page 2

• Manufacturer Part Number: IRF7452
• Description: MOSFET N-CH 100V 4.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7452

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7452

IRF7452
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Diode Characteristics
Static @ T
R
E
I
E
R
V
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
I
V
t
Q
AR
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
V
fs
AS
AR
DS(on)
(BR)DSS
GS(th)
iss
oss
rss
oss
oss
oss
SD
2
g
gs
gd
rr
(BR)DSS
JA
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Effective Output Capacitance
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
3.4
Min. Typ. Max. Units
–––
–––
–––
–––
–––
0.11
1370 –––
–––
––– 0.060
–––
–––
–––
–––
––– -100
–––
930
300
170
280
–––
–––
–––
270
7.3
9.5
33
16
11
16
13
84
77
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
120
410
5.5
1.3
25
50
11
24
2.3
36
V/°C
µA
nA
nC
ns
pF
nC
ns
S
V
V
V
Typ.
Typ.
A
–––
–––
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
Reference to 25°C, I
I
integral reverse
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 2.7A
= 2.7A
= 25°C, I
= 25°C, I
= 6.0
= 0V, I
= 10V, I
= V
= 100V, V
= 80V, V
= 24V
= -24V
= 50V, I
= 80V
= 10V,
= 50V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
GS
Conditions
Conditions
= 2.7A
= 2.7A, V
= 250µA
= 2.7A
= 2.7A
GS
= 0V to 80V
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
0.25
= 0V, T
200
4.5
50
= 0V
D
www.irf.com
= 1mA
GS
J
= 150°C
G
= 0V
Units
Units
°C/W
mJ
mJ
A
S
D