IRF7452 International Rectifier, IRF7452 Datasheet - Page 2
![MOSFET N-CH 100V 4.5A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7452
Manufacturer Part Number
IRF7452
Description
MOSFET N-CH 100V 4.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7452.pdf
(8 pages)
Specifications of IRF7452
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 2.7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
930pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7452
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7452
Manufacturer:
TOYOCOM
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Part Number:
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Manufacturer:
IR
Quantity:
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Quantity:
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Part Number:
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Manufacturer:
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Quantity:
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IRF7452
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Diode Characteristics
Static @ T
R
E
I
E
R
V
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
I
V
t
Q
AR
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
V
fs
AS
AR
DS(on)
(BR)DSS
GS(th)
iss
oss
rss
oss
oss
oss
SD
2
g
gs
gd
rr
(BR)DSS
JA
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Effective Output Capacitance
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
3.4
Min. Typ. Max. Units
–––
–––
–––
–––
–––
0.11
1370 –––
–––
––– 0.060
–––
–––
–––
–––
––– -100
–––
930
300
170
280
–––
–––
–––
270
7.3
9.5
33
16
11
16
13
84
77
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
120
410
5.5
1.3
25
50
11
24
2.3
36
V/°C
µA
nA
nC
ns
pF
nC
ns
S
V
V
V
Typ.
Typ.
A
–––
–––
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
Reference to 25°C, I
I
integral reverse
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 2.7A
= 2.7A
= 25°C, I
= 25°C, I
= 6.0
= 0V, I
= 10V, I
= V
= 100V, V
= 80V, V
= 24V
= -24V
= 50V, I
= 80V
= 10V,
= 50V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
GS
Conditions
Conditions
= 2.7A
= 2.7A, V
= 250µA
= 2.7A
= 2.7A
GS
= 0V to 80V
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
0.25
= 0V, T
200
4.5
50
= 0V
D
www.irf.com
= 1mA
GS
J
= 150°C
G
= 0V
Units
Units
°C/W
mJ
mJ
A
S
D