IRF7459 International Rectifier, IRF7459 Datasheet - Page 5

• Manufacturer Part Number: IRF7459
• Description: MOSFET N-CH 20V 12A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7459

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2480pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7459

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15
12
9
6
3
0
25
Fig 9. Maximum Drain Current Vs.
0.01
100
0.1
10
0.00001
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
0.01
150
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
0.1
V
90%
10%
V
DS
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
R
d(on)
Pulse Width
Duty Factor
G
10V
V
1
J
GS
t
r
V
DM
DS
x Z
1
µs
thJA
P
2
DM
+ T
10
A
D.U.T.
t
1
IRF7459
t
d(off)
t
2
R
D
t
f
100
+
-
V
DD
5