IRF7467 International Rectifier, IRF7467 Datasheet - Page 5

• Manufacturer Part Number: IRF7467
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7467

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2530pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7467

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12
10
8
6
4
2
0
Fig 9. Maximum Drain Current Vs.
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.01
100
0.1
0.00001
10
1
D = 0.50
50
Case Temperature
T , Case Temperature ( C)
0.20
0.10
0.05
0.02
0.01
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.1
t
R
d(on)
Pulse Width
Duty Factor
1. Duty factor D = t / t
2. Peak T = P
G
Notes:
10V
V
GS
t
r
1
V
J
DS
DM
µs
x Z
1
thJA
P
2
D.U.T.
DM
IRF7467
+ T
10
t
d(off)
A
t
R
1
D
t
2
t
f
100
+
-
V
DD
5