IRF9530NSTRR International Rectifier, IRF9530NSTRR Datasheet - Page 6
![MOSFET P-CH 100V 14A D2PAK](/photos/5/40/54080/21-d2pak_smd-220_sml.jpg)
IRF9530NSTRR
Manufacturer Part Number
IRF9530NSTRR
Description
MOSFET P-CH 100V 14A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9530NS.pdf
(11 pages)
Specifications of IRF9530NSTRR
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
760pF @ 25V
Power - Max
3.8W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF9530NSTRRPBF
Manufacturer:
GRAIN
Quantity:
1 560
IRF9530NS/L
-10V
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
V
Fig 13a. Basic Gate Charge Waveform
I
A S
G
R G
-2 0 V
Q
V D S
GS
t p
I A S
D .U .T
t p
0 .0 1
L
Q
Charge
Q
GD
G
D R IV E R
V
(BR)DSS
1 5 V
V D D
A
700
600
500
400
300
200
100
0
Fig 12c. Maximum Avalanche Energy
25
Fig 13b. Gate Charge Test Circuit
12V
Starting T , Junction Temperature ( C)
V
GS
50
Same Type as D.U.T.
Current Regulator
.2 F
Vs. Drain Current
J
75
50K
-3mA
Current Sampling Resistors
.3 F
100
I
G
D.U.T.
125
TOP
BOTTOM
I
D
150
+
-
V
DS
-3.4A
-5.9A
-8.4A
°
I D
175