IRF7526D1TR International Rectifier, IRF7526D1TR Datasheet - Page 5
![MOSFET P-CH 30V 2A MICRO8](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7526D1TR
Manufacturer Part Number
IRF7526D1TR
Description
MOSFET P-CH 30V 2A MICRO8
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7526D1.pdf
(8 pages)
Specifications of IRF7526D1TR
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
200 mOhm @ 1.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
180pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7526D1TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
1000
100
0.1
Fig 10. Typical On-Resistance Vs. Drain
10
0.00001
1.5
1.0
0.5
0.0
1
0
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1
(THERMAL RESPONSE)
0.0001
-I , D rain C urrent (A )
D
SINGLE PULSE
Current
2
V G S = -1 0V
V G S = -4.5V
0.001
Power Mosfet Characteristics
3
t , Rectangular Pulse Duration (sec)
1
0.01
4
A
0 . 6 0
0 . 5 0
0 . 4 0
0 . 3 0
0 . 2 0
0 . 1 0
Fig 11. Typical On-Resistance Vs. Gate
0.1
3
-V
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
6
, G ate-to-S ourc e V oltage (V )
1
J
Voltage
I
DM
= -2.0A
x Z
9
1
thJC
P
2
IRF7526D1
DM
+ T
10
C
t
1
1 2
t
2
5
100
1 5
A