IRF7241 International Rectifier, IRF7241 Datasheet

MOSFET P-CH 40V 6.2A 8-SOIC

IRF7241

Manufacturer Part Number
IRF7241
Description
MOSFET P-CH 40V 6.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7241

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
41 mOhm @ 6.2A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
6.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
3220pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7241(BLACK)
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7241PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7241TRPBF
Manufacturer:
International Rectifier
Quantity:
34 620
Part Number:
IRF7241TRPBF
Manufacturer:
M/A-COM
Quantity:
5 000
Part Number:
IRF7241TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7241TRPBF
Quantity:
36 000
Company:
Part Number:
IRF7241TRPBF
Quantity:
4 800
Company:
Part Number:
IRF7241TRPBF
Quantity:
15 969
Description
Absolute Maximum Ratings
Thermal Resistance
New trench HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
www.irf.com
Symbol
R
R
V
I
I
I
P
P
V
T
D
D
DM
J,
Trench Technology
Ultra Low On-Resistance
Available in Tape & Reel
DS
D
D
GS
P-Channel MOSFET
@ T
@ T
JL
JA
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
device
Junction-to-Drain Lead
Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
design that HEXFET power
®
Power MOSFETs
Parameter
Parameter
GS
GS
@ -10V
@ -10V
from
G
S
S
S
V
-40V
DSS
1
2
3
4
T o p V ie w
Typ.
–––
–––
R
HEXFET
8
6
5
7
DS(on)
-55 to + 150
70@V
41@V
Max.
-6.2
-4.9
± 20
D
D
D
D
-40
-25
2.5
1.6
20
A
GS
GS
max (m
®
= -4.5V
IRF7241
= -10V
Power MOSFET
Max.
20
50
SO-8
PD- 94087
-6.2A
-5.0A
mW/°C
Units
Units
I
°C/W
D
W
°C
V
A
V
1
1/26/01

Related parts for IRF7241

IRF7241 Summary of contents

Page 1

... JA www.irf.com HEXFET V R DSS DS(on) -40V 41@V 70 from Max. @ -10V GS @ -10V GS - 150 Typ. ––– ––– PD- 94087 IRF7241 ® Power MOSFET max ( -10V -6. -4.5V -5. SO-8 Units -40 V -6.2 -4.9 A -25 2.5 W 1.6 20 mW/°C ± °C Max. Units ...

Page 2

... IRF7241 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM 10 1 ° 0.1 0.1 100 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 0.0 -60 -40 -20 4.0 4.5 5.0 Fig 4. Normalized On-Resistance IRF7241 VGS -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V -2.70V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS -6.2A ...

Page 4

... IRF7241 5000 0V MHZ C iss = rss = C gd 4000 C oss = Ciss 3000 2000 1000 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 0.1 0.4 0.6 0.8 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 Fig 6. Typical Gate Charge Vs. ...

Page 5

... RESPONSE) 0.1 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V GS 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7241 D.U. Pulse Width µs Duty Factor ...

Page 6

... IRF7241 0.10 0.08 0. -6.2A 0.04 0. GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.08 0. -4.5V 0.04 0. Fig 13. Typical On-Resistance Vs. Current Regulator Same Type as D.U. 12V V GS Fig 14b. Gate Charge Test Circuit -10V ...

Page 7

... Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 100 -250µ 0.001 75 100 125 150 Fig 16. Typical Power Vs. Time IRF7241 0.010 0.100 1.000 10.000 100.000 Time (sec) 7 ...

Page 8

... IRF7241 SO-8 Package Details 0.25 [.010 NOT ES: 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.1/01 IRF7241 TAC Fax: (310) 252-7903 9 ...

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