IRF5800 International Rectifier, IRF5800 Datasheet - Page 3

• Manufacturer Part Number: IRF5800
• Description: MOSFET P-CH 30V 4A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5800

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 535pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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0.01
100
0.1
100
10
Fig 3. Typical Transfer Characteristics
0.1
Fig 1. Typical Output Characteristics
10
1
1
0.1
2.0
TOP
BOTTOM
-V
-V
DS
3.0
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-2.7V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
4.0
1
T = 25 C
J
-2.70V
5.0
°
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
T = 150 C
6.0
10
J
= -15V
°
7.0
°
8.0
100
0.01
100
0.1
10
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
-60 -40 -20
TOP
BOTTOM
I =
D
-V
-4.0A
DS
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-2.7V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
0
1
20 40 60 80 100 120 140 160
-2.70V
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
-10V
3
100