IRF7807A International Rectifier, IRF7807A Datasheet - Page 2

• Manufacturer Part Number: IRF7807A
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7807A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7807A

IRF7807/IRF7807A
Electrical Characteristics
Source-Drain Rating & Characteristics
2
Parameter
Drain-to-Source
Breakdown Voltage*
Static Drain-Source
on Resistance*
Gate Threshold Voltage* V
Drain-Source Leakage
Current*
Gate-Source Leakage
Current*
Total Gate Charge*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Charge*
(Q
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Parameter
Diode Forward
Voltage*
Reverse Recovery
Charge„
Reverse Recovery
Charge (with Parallel
Schotkky)„
gs2
+ Q
gd
)
Notes:

‚
ƒ
„
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
Devices are 100% tested to these parameters.
V
R
I
Q
Q
Q
Q
Q
Q
R
t
t
t
t
V
Q
Q
I
DSS
GSS
d
r
d
f
(on)
(BR)DSS
GS
SD
DS
g
g
gs1
gs2
gd
SW
oss
(off)
rr
rr(s)
(th)
(on)
300 µs; duty cycle
oss
Min
Min Typ Max
1.0
30
IRF7807
0.76
3.66
Typ Max
2.1
2.9
1.2
17
12
14
12
17
25
80
50
–
6
2%.
±100
16.8
150
5.2
1.2
25
30
17
–
Min Typ Max Units
Min
1.0
30
IRF7807A
0.76
3.66
Typ Max Units
2.1
2.9
1.2
17
12
14
12
17
25
80
50
–
6
±100
16.8
150
1.2
30
25
17
–
m
µA
nA
nC
nC
ns
V
V
V
I
di/dt = 700A/µs
V
di/dt = 700A/µs
(with 10BQ040)
V
S
V
V
V
V
V
Tj = 100°C
V
V
V
V
V
I
R
V
Resistive Load
DS
DS
D
= 7A‚, V
GS
GS
DS
DS
DS
GS
GS
DS
DS
DD
GS
g
= 7A
= 16V, V
= 16V, V
= 2
= V
= 24V, V
= 16V, I
= 16V, V
= 16V
= 0V, I
= 4.5V, I
= 24V, V
= ±12V
= 5V, I
= 4.5V
Conditions
Conditions
GS
, I
D
D
GS
D
www.irf.com
GS
D
GS
= 7A
= 250µA
D
GS
GS
= 250µA
GS
= 7A
= 0V
= 7A‚
= 0V, I
= 0V, I
= 0,
= 0
= 0
S
S
= 7A
= 7A