SI3443DV International Rectifier, SI3443DV Datasheet

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... Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET Top View 60% DS(on) reduction DS(on) @ -4. -4. 150 ƒ PD- 93795B Si3443DV ® Power MOSFET -20V DSS 0.065 S DS(on) TSOP-6 Max. Units -20 V -4.4 -3.5 A -20 2.0 1.3 0.016 W/° ± °C Max ...

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... Si3443DV Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

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... Fig 2. Typical Output Characteristics 2 1.5 ° J 1.0 0.5 = -15V 0.0 3.0 3.5 -60 -40 -20 Fig 4. Normalized On-Resistance Si3443DV VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V -1.50V -1.50V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS -5. ...

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... Si3443DV 1600 1MHz iss rss oss ds gd 1200 C iss 800 400 C oss C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 C J ° 0.1 0.0 0.4 0.8 1.2 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 125 150 ° Starting T , Junction Temperature ( C) Fig 10. Maximum Avalanche Energy 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 Si3443DV I D TOP -1.3A -2.4A BOTTOM -3. 100 125 ° J Vs. Drain Current Notes: ...

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... Si3443DV TSOP-6 TSOP-6 I‚‡r†)ÃUuv†Ãƒh…‡Ã€h…xvtÃvs‚…€h‡v‚Ãhƒƒyvr†Ã‡‚Ãqr‰vpr†Ãƒ…‚qˆprqÃirs‚…rÃ!!%! @Y6HQG@)à ...

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... TSOP-6 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/03 Si3443DV 7 ...