IRF7701 International Rectifier, IRF7701 Datasheet

MOSFET P-CH 12V 10A 8-TSSOP

IRF7701

Manufacturer Part Number
IRF7701
Description
MOSFET P-CH 12V 10A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7701

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 10A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 4.5V
Input Capacitance (ciss) @ Vds
5050pF @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7701TR
Manufacturer:
MICREL
Quantity:
1 000
Part Number:
IRF7701TR
Manufacturer:
IR
Quantity:
20 000
Description
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for,
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
J,
DS
D
D
GS
@ T
@ T
JA
P-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
@T
@T
T
STG
A
A
A
A
= 25°C
= 70°C
®
= 25°C
= 70°C
power MOSFETs from International Rectifier
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Power Dissipation
Power Dissipation
Parameter
Parameter
provides thedesigner
GS
GS
@ -4.5V
@ -4.5V
2
3
4
1
1 = D
2 = S
3 = S
4 = G
V
DSS
-12V
G
D
S
HEXFET
0.011@V
0.015@V
0.022@V
8 = D
7 = S
5 = D
6 = S
-55 to + 150
R
8
7
6
5
Max.
Max.
DS(on)
±8.0
0.96
± 8.0
±10
±80
83
-12
1.5
12
®
GS
GS
GS
IRF7701
Power MOSFET
max
= -4.5V
= -2.5V
= -1.8V
TSSOP-8
PD - 93940
-8.5A
-7.0A
-10A
mW/°C
Units
Units
I
°C/W
D
W
°C
V
A
V
1
6/21/00

Related parts for IRF7701

IRF7701 Summary of contents

Page 1

... Maximum Junction-to-Ambient JA www.irf.com HEXFET V R DSS DS(on) 0.011@V -12V 0.015@V 0.022 Max. @ -4. -4.5V ±8.0 GS 0.96 ± 8.0 - 150 Max 93940 IRF7701 ® Power MOSFET max -4.5V -10A GS = -2.5V -8. -1.8V -7.0A GS TSSOP-8 Units -12 V ±10 A ±80 1 mW/°C V °C Units 83 °C/W 1 6/21/00 ...

Page 2

... IRF7701 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM 10 1 ° 0.1 10 0.1 -V Fig 2. Typical Output Characteristics 2.0 -10A ° 1.5 1.0 0.5 0.0 2.5 3.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7701 VGS -7.00V -4.5V -3.0V -2.5V -1.8V -1.5V -1.2V -1.0V -1.0V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( -4.5V GS ...

Page 4

... IRF7701 8000 0V MHZ C iss = rss = oss = 6000 Ciss 4000 Coss 2000 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° 150 ° 0.1 0.2 0.4 0.6 0.8 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7701 D.U. µ d(off ...

Page 6

... IRF7701 0.05 0.04 0. -10A 0.02 0.01 0.00 1.5 2.5 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic Gate Charge Waveform 6 0.020 0.015 0.010 0.005 3.5 4.5 0 Fig 12. Typical On-Resistance Vs. Drain 12V V GS Fig 13b. Gate Charge Test Circuit ...

Page 7

... Temperature ( °C ) Fig 14. Threshold Voltage Vs. Temperature www.irf.com -250µ 100 125 150 0.01 Fig 15. Typical Power Vs. Time IRF7701 0.10 1.00 10.00 100.00 Time (sec) 7 ...

Page 8

... IRF7701 TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.) TSSOP-8 Tape and Reel DAT E CODE (YW) T ABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.) ...

Page 9

... IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 www.irf.com IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 011 451 0111 Data and specifications subject to change without notice. 6/00 IRF7701 9 ...

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