IRF7450 International Rectifier, IRF7450 Datasheet - Page 6

• Manufacturer Part Number: IRF7450
• Description: MOSFET N-CH 200V 2.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7450

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7450

IRF7450
I
A S
12V
Fig 15a&b. Unclamped Inductive Test circuit
6
V
Fig 14a&b. Basic Gate Charge Test Circuit
GS
0.18
0.16
0.14
0.12
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2 F
0
50K
3mA
t p
Current Sampling Resistors
.3 F
I
G
V
4
(B R )D S S
D.U.T.
V GS = 10V
I
D
and Waveforms
and Waveform
I D , Drain Current (A)
+
-
V
DS
8
V
R G
GS
20V
V D S
12
t p
V
G
Q
I A S
GS
D .U .T
16
0.01
L
Charge
Q
Q
GD
G
20
1 5 V
DRIVE R
24
+
-
V D D
A
0.35
0.30
0.25
0.20
0.15
0.10
Fig 13. On-Resistance Vs. Gate Voltage
600
500
400
300
200
100
0
25
Fig 15c. Maximum Avalanche Energy
6
Starting T , Junction Temperature ( C)
V GS, Gate -to -Source Voltage (V)
50
8
Vs. Drain Current
J
I D = 1.5A
75
10
100
12

TOP
BOTTOM
www.irf.com
125
14
°
1.1A
1.6A
2.5A
I D
150
16