IRF7433 International Rectifier, IRF7433 Datasheet - Page 3

• Manufacturer Part Number: IRF7433
• Description: MOSFET P-CH 12V 8.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7433

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 8.7A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1877pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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100
100
0.1
10
10
Fig 1. Typical Output Characteristics
1
1
Fig 3. Typical Transfer Characteristics
1.0
0.1
T = 150 C
J
-V
GS
-V DS , Drain-to-Source Voltage (V)
°
, Gate-to-Source Voltage (V)
1.5
1
T = 25 C
-1.2V
J
20µs PULSE WIDTH
Tj = 25°C
°
V
20µs PULSE WIDTH
DS
2.0
10
= -10V
TOP
BOTTOM -1.2V
VGS
-10.0V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
2.5
100
100
0.1
10
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I =
D
-8.7A
-V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
-1.2V
20µs PULSE WIDTH
Tj = 150°C
IRF7433
10
TOP
BOTTOM -1.2V
V
GS
°
=
-4.5V
VGS
-10.0V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
3
100