IRF3709 International Rectifier, IRF3709 Datasheet - Page 7
![MOSFET N-CH 30V 90A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF3709
Manufacturer Part Number
IRF3709
Description
MOSFET N-CH 30V 90A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3709S.pdf
(12 pages)
Specifications of IRF3709
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
41nC @ 5V
Input Capacitance (ciss) @ Vds
2672pF @ 16V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3709
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Manufacturer
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Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
D.U.T
G
*
Fig 14. For N-Channel HEXFET
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
= 5V for Logic Level Devices
P.W.
SD
DS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Ground Plane
Current Transformer
Low Stray Inductance
Low Leakage Inductance
®
D =
-
Power MOSFETs
IRF3709/3709S/3709L
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
7