IRF7451 International Rectifier, IRF7451 Datasheet - Page 6

• Manufacturer Part Number: IRF7451
• Description: MOSFET N-CH 150V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7451

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 990pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7451

IRF7451
I
A S
6
12V
Fig 14a&b. Unclamped Inductive Test circuit
V
GS
Fig 13a&b. Basic Gate Charge Test Circuit
0.085
0.083
0.080
0.078
0.075
0.073
0.070
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2 F
50K
3mA
t p
Current Sampling Resistors
0
.3 F
I
G
V
2
(B R )D S S
D.U.T.
I
D
and Waveforms
and Waveform
4
+
I D , Drain Current ( A )
-
V
DS
VGS = 10V
6
V
R G
GS
20 V
V D S
8
t p
V
G
Q
I A S
GS
D.U .T
10
0.0 1
L
Q
Charge
Q
12
GD
G
1 5 V
14
DRIVER
+
-
16
V D D
A
0.120
0.105
0.090
0.075
0.060
500
400
300
200
100
Fig 13. On-Resistance Vs. Gate Voltage
0
25
Fig 14c. Maximum Avalanche Energy
6.0
Starting T , Junction Temperature ( C)
7.0
V GS, Gate -to -Source Voltage (V)
50
8.0
Vs. Drain Current
J
9.0
75
10.0 11.0 12.0 13.0 14.0 15.0
I D = 2.2A
100
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TOP
BOTTOM
125
1.6A
2.9A
3.6A
I D
°
150