IRF7326D2 International Rectifier, IRF7326D2 Datasheet - Page 6

• Manufacturer Part Number: IRF7326D2
• Description: MOSFET P-CH 30V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7326D2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Continuous Drain (id) @ 25° C: -

IRF7326D2
6
1 0 0
0.1
1 0
Fig. 12 - Typical Forward Voltage Drop
1
0.0
0.2
Forward Voltage Drop - V
Characteristics
0.4
0.6
Schottky Diode Characteristics
T = 1 50 °C
T = 1 25 °C
T = 2 5 °C
J
J
J
0.8
F
( )
(V)
1.0
Fig.14 - Maximum Allowable Ambient
0 . 0 0 1
0 . 0 1
1 0 0
0 . 1
1 0
1 6 0
1 4 0
1 2 0
1 0 0
1
8 0
6 0
4 0
2 0
Reverse Current Vs. Reverse
Temp. Vs. Forward Current
0
0
Fig. 13 - Typical Values of
0 . 0
Av era ge F orw ard C urrent - I
D = 3/4
D = 1/2
D =1 /3
D = 1/4
D = 1/5
T = 150°C
J
0 . 5
5
Reverse Voltage - V
125°C
100°C
1 . 0
75°C
50°C
25°C
Voltage
1 0
1 . 5
1 5
2 . 0
www.irf.com
V = 8 0 % R ated
R
Sq uare wave
2 . 5
2 0
r
t hJA
R
(V)
3 . 0
= 6 2.5° C /W
F(AV )
D C
2 5
3 . 5
(A )
4 . 0
3 0
A
A