IRL3716 International Rectifier, IRL3716 Datasheet - Page 2

• Manufacturer Part Number: IRL3716
• Description: MOSFET N-CH 20V 180A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3716

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 79nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5090pF @ 10V
• Power - Max: 210W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL3716; Q1265959

Diode Characteristics
IRL3716/3716S/3716L
Avalanche Characteristics
Dynamic @ T
Static @ T
R
t
Symbol
E
I
V
Symbol
I
I
t
Q
t
Q
V
∆V
V
Symbol
g
Q
Q
Q
Q
R
t
t
t
C
C
C
I
I
d(on)
AR
S
DSS
d(off)
f
SM
rr
rr
GSS
r
2
AS
fs
SD
DS(on)
(BR)DSS
GS(th)
g
gd
iss
oss
rss
g
gs
oss
rr
rr
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Diode Forward Voltage
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Min.
–––
–––
–––
–––
–––
–––
–––
1.0
20
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
––– 0.93
––– 0.80 –––
–––
–––
–––
–––
Typ.
5090 –––
3440 –––
0.021
–––
140
560
–––
–––
180
190
–––
–––
–––
–––
–––
–––
3.0
4.0
1.5
87
85
53
17
24
50
18
38
36
180
720
130
130
–––
280
280
–––
–––
–––
–––
–––
1.3
Max. Units
79
26
35
75
-200
–––
––– V/°C Reference to 25°C, I
250
200
4.0
4.8
3.0
20
†
mΩ
ns
pF
µA
nA
nC
nC
nC
ns
ns
V
V
V
S
Ω
Typ.
–––
–––
di/dt = 100A/µs ƒ
di/dt = 100A/µs ƒ
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
V
V
V
V
V
V
V
V
V
I
V
V
V
V
I
R
V
V
V
D
D
J
J
J
J
DS
DS
GS
GS
DD
GS
GS
DS
GS
GS
GS
DS
DS
DS
GS
GS
G
= 72A
= 72A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 3.9Ω
= V
= 16V, V
= 16V, V
= 16V
= 10V, I
= 16V
= 4.5V
= 0V, V
= 4.5V
= 0V
= 10V
= 0V, I
= 10V, I
= 4.5V, I
= -16V
= 10V
GS
, I
D
S
F
DS
D
D
D
S
F
= 250µA
D
GS
GS
Conditions
= 72A, V
= 72A, V
ƒ
Conditions
Conditions
= 250µA
= 72A
= 90A
= 72A, V
= 72A, V
= 72A
= 10V
Max.
= 0V
640
= 0V, T
72
D
www.irf.com
GS
R
= 1mA
ƒ
ƒ
GS
=20V
R
J
=20V
= 125°C
= 0V ƒ
G
= 0V ƒ
Units
mJ
A
D
S