IRFL4315 International Rectifier, IRFL4315 Datasheet

MOSFET N-CH 150V 2.6A SOT223

IRFL4315

Manufacturer Part Number
IRFL4315
Description
MOSFET N-CH 150V 2.6A SOT223
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFL4315

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
185 mOhm @ 1.6A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
420pF @ 25V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFL4315

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l
Benefits
l
l
l
Thermal Resistance
Applications
Absolute Maximum Ratings
www.irf.com
I
I
I
P
V
dv/dt
T
T
Symbol
R
Notes  through † are on page 8
D
D
DM
J
STG
D
GS
@ T
@ T
JA
App. Note AN1001)
and Current
Effective C
High frequency DC-DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Junction-to-Ambient (PCB Mount, steady state)
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
to Simplify Design, (See
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
150V
DSS
Typ.
300 (1.6mm from case )
–––
185
HEXFET
-55 to + 150
R
m
Max.
0.02
DS(on)
± 30
2.6
2.1
2.8
6.3
21
@V
IRFL4315
®
GS
Power MOSFET
max
Max.
S O T -2 2 3
45
= 10V 2.6A
PD - 94445
Units
Units
W/°C
06/14/02
°C/W
I
V/ns
D
°C
W
A
V
1

Related parts for IRFL4315

IRFL4315 Summary of contents

Page 1

... Junction-to-Ambient (PCB Mount, steady state) JA Notes  through † are on page 8 www.irf.com SMPS MOSFET HEXFET V DSS 150V 185 @ 10V GS @ 10V GS - 150 300 (1.6mm from case ) Typ. „ ––– 94445 IRFL4315 ® Power MOSFET R max I DS(on 10V 2. Max. Units 2 ...

Page 2

... IRFL4315 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... TOP 10 BOTTOM 5.5V 5.5V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 2.0 1.5 1.0 0.5 0.0 -60 9.0 10.0 Fig 4. Normalized On-Resistance IRFL4315 VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) 2. 10V GS -40 ...

Page 4

... IRFL4315 10000 0V MHZ C iss = SHORTED C rss = oss = 1000 C iss 100 C oss C rss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100  ° 150 0.1 0.0 0.5 1.0 1.5 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 1. 100 1000 0 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 d(on) Fig 10b. Switching Time Waveforms  Notes: 1. Duty factor Peak T 0.01 0 Rectangular Pulse Duration (sec) 1 IRFL4315 D.U. µ d(off ...

Page 6

... IRFL4315 240 220 200 10V 180 160 140 120 100 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50K 12V . D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 20V Fig 15a&b. Unclamped Inductive Test circuit ...

Page 7

... Package Outline SOT-223 (TO-261AA) Outline Part Marking Information SOT-223 TIO www.irf.com IRFL4315 ...

Page 8

... IRFL4315 Tape & Reel Information SOT-223 Outline ING LIM LIN -48 1 & - 30.0 0 ( 330.00 (13.000 Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 7.8mH 3.1A ƒ Pulse width 400µs; duty cycle 2%. ...

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