IRLR8113 International Rectifier, IRLR8113 Datasheet

MOSFET N-CH 30V 94A DPAK

IRLR8113

Manufacturer Part Number
IRLR8113
Description
MOSFET N-CH 30V 94A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR8113

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
94A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 4.5V
Input Capacitance (ciss) @ Vds
2920pF @ 15V
Power - Max
89W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR8113

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Applications
l
l
l
l
l
Benefits
www.irf.com
Notes  through
V
V
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
DS
GS
D
D
J
STG
θJC
θJA
θJA
and Current
@ T
@ T
for Telecom and Industrial Use
Converters with Synchronous Rectification
High Frequency Synchronous Buck
High Frequency Isolated DC-DC
Very Low R
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
@T
@T
Converters for Computer Processor Power
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
DS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
(on) at 4.5V V
are on page 11
Parameter
Parameter
GS
GS
GS
@ 10V
@ 10V
V
30V
DSS
Typ.
300 (1.6mm from case)
–––
–––
–––
10 lbf
-55 to + 175
HEXFET Power MOSFET
x
R
Max.
in (1.1 N
94
67
0.59
± 20
380
IRLR8113
30
89
44
DS(on)
f
f
D-Pak
6.0m
x
m)
Max.
1.69
110
50
IRLR8113
IRLU8113
max
:
IRLU8113
I-Pak
22nC
Units
Units
W/°C
°C/W
Qg
02/14/03
°C
W
V
A
1

Related parts for IRLR8113

IRLR8113 Summary of contents

Page 1

... GS ™ 300 (1.6mm from case) 10 lbf Typ. ––– gà ––– ––– IRLR8113 IRLU8113 HEXFET Power MOSFET R max Qg DS(on) : 6.0m 22nC D-Pak I-Pak IRLR8113 IRLU8113 Max. Units 30 V ± 380 0.59 W/°C - 175 ° (1 Max ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 25° 15V 20µs PULSE WIDTH ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

Page 5

Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 10 1 0.1 0.01 0.001 1E-006 1E-005 ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 15. Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse „ Recovery - Current + D.U.T. V ...

Page 8

Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on )  ...

Page 9

A - 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 0.89 (.035) 3X 0.64 (.025) 1.14 (.045) 2X 0.25 (.010) 0.76 (.030) 2.28 (.090) 4.57 (.180) Notes ...

Page 10

A - 5.46 (.215) 5.21 (.205) 4 6.22 (.245) 1.52 (.060) 5.97 (.235) 1.15 (.045 2.28 (.090) 9.65 (.380) 1.91 (.075) 8.89 (.350) 1.14 (.045) 3X 0.89 (.035) 0.76 ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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