IRF7492 International Rectifier, IRF7492 Datasheet - Page 6

• Manufacturer Part Number: IRF7492
• Description: MOSFET N-CH 200V 3.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7492

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1820pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7492

IRF7492
I
AS
12V
Fig 15a&b. Unclamped Inductive Test circuit
6
V
Fig 14a&b. Basic Gate Charge Test Circuit
GS
Same Type as D.U.T.
100
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2µF
90
80
70
60
50
40
50KΩ
3mA
t p
0
Current Sampling Resistors
.3µF
I
G
V
(BR)DSS
5
D.U.T.
I
D
and Waveforms
and Waveform
V GS = 10V
I D , Drain Current (A)
+
-
V
DS
10
V
R G
GS
20V
V DS
15
t p
V
G
Q
I AS
GS
D.U.T
20
0.01 Ω
L
Charge
Q
Q
GD
G
25
15V
DRIVER
30
+
-
V DD
A
Fig 13. On-Resistance Vs. Gate Voltage
500
400
300
200
100
300
250
200
150
100
50
0
0
25
Fig 15c. Maximum Avalanche Energy
5
Starting Tj, Junction Temperature
6
V GS, Gate -to -Source Voltage (V)
50
7
Vs. Drain Current
8
75
I D = 3.7A
9
10
100
11
TOP
BOTTOM
www.irf.com
12
( C)
°
125
13
2.0A
3.5A
4.4A
14
I D
150
15