IRF3205Z International Rectifier, IRF3205Z Datasheet - Page 6

• Manufacturer Part Number: IRF3205Z
• Description: MOSFET N-CH 55V 75A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3205Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3450pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3205Z

0
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V
V DS
GS
Q
GS
t p
1K
t p
I AS
D.U.T
0.01 Ω
L
Charge
Q
Q
V
GD
G
(BR)DSS
DUT
15V
L
DRIVER
+
-
V DD
A
VCC
Fig 14. Threshold Voltage Vs. Temperature
350
300
250
200
150
100
4.0
3.0
2.0
1.0
50
0
Fig 12c. Maximum Avalanche Energy
-75 -50 -25
25
Starting T J , Junction Temperature (°C)
50
Vs. Drain Current
T J , Temperature ( °C )
0
75
25
100
50
75
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125
I D = 250µA
100 125 150 175
150
175