IRFR4105Z International Rectifier, IRFR4105Z Datasheet - Page 7
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IRFR4105Z
Manufacturer Part Number
IRFR4105Z
Description
MOSFET N-CH 55V 30A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFU4105ZTR.pdf
(12 pages)
Specifications of IRFR4105Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24.5 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
740pF @ 25V
Power - Max
48W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR4105Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR4105Z
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRFR4105Z
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFR4105ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRFR4105ZTRPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
www.irf.com
100
0.1
10
30
25
20
15
10
1
1.0E-06
5
0
Fig 16. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
50
Vs. Temperature
0.01
0.05
0.10
TOP
BOTTOM 1% Duty Cycle
I D = 18A
75
1.0E-05
Fig 15. Typical Avalanche Current Vs.Pulsewidth
100
Single Pulse
125
150
1.0E-04
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
t
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
every part type.
not exceeded.
Figures 12a, 12b.
avalanche pulse.
voltage increase during avalanche).
T
D = Duty cycle in avalanche = t
Z
av =
av
thJC
jmax
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
1.0E-03
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
Allowed avalanche Current vs
avalanche
assuming ∆ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
= P
D (ave)
jmax
pulsewidth,
1.0E-02
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
thJC
tav
jmax
1.0E-01
7
is