IRF7807Z International Rectifier, IRF7807Z Datasheet - Page 2
IRF7807Z
Manufacturer Part Number
IRF7807Z
Description
MOSFET N-CH 30V 11A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7807ZTR.pdf
(10 pages)
Specifications of IRF7807Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.8 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
770pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7807Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7807Z
Manufacturer:
VISHAY
Quantity:
3 000
Part Number:
IRF7807Z
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7807ZTRPBF
Manufacturer:
IR
Quantity:
21 400
Company:
Part Number:
IRF7807ZTRPBF
Manufacturer:
International Rectifier
Quantity:
68 893
Part Number:
IRF7807ZTRPBF
Manufacturer:
IR
Quantity:
20 000
∆ΒV
∆V
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
2
DS(on)
GS(th)
G
iss
oss
rss
AS
SD
g
sw
oss
rr
Q
Q
Q
Q
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 25°C (unless otherwise specified)
Parameter
Ã
Parameter
Parameter
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
1.35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
22
0.023
14.5
- 4.7
–––
–––
–––
–––
–––
–––
770
190
100
–––
–––
–––
1.8
7.2
2.1
0.7
2.7
3.4
2.8
2.5
6.9
6.2
3.1
1.7
11
10
31
17
-100
Typ.
13.8
18.2
2.25
–––
–––
––– mV/°C
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
4.8
3.1
1.0
11
88
46
26
V/°C
mΩ
µA
nA
nC
nC
nC
ns
pF
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 16
V
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
= 8.8A
= 8.8A
= 25°C, I
= 25°C, I
= V
= 24V, V
= 24V, V
= 15V, I
= 15V
= 15V, V
= 15V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 15V, V
= 0V
GS
Max.
, I
8.8
63
D
Conditions
Conditions
D
S
F
D
D
= 250µA
D
GS
GS
GS
GS
= 250µA
= 8.8A, V
= 8.8A, V
= 8.8A
= 11A
= 8.8A
= 0V
= 0V, T
= 0V
e
= 4.5V
www.irf.com
D
e
e
= 1mA
GS
DD
J
e
= 125°C
= 15V
= 0V
Units
mJ
A
e