IRFR3709Z International Rectifier, IRFR3709Z Datasheet - Page 5

• Manufacturer Part Number: IRFR3709Z
• Description: MOSFET N-CH 30V 86A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3709Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2330pF @ 15V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR3709Z

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100
0.001
90
80
70
60
50
40
30
20
10
0.01
0.1
0
10
Fig 9. Maximum Drain Current vs.
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.20
0.10
0.05
0.02
Case Temperature
0.01
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
Limited By Package
125
0.0001
150
t 1 , Rectangular Pulse Duration (sec)
175
0.001
τ
J
τ
J
τ
Fig 10. Threshold Voltage vs. Temperature
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
2.5
2.0
1.5
1.0
0.5
0.0
0.01
-75 -50 -25
R
1
R
1
τ
2
R
τ
2
2
R
2
T J , Temperature ( °C )
R
0
τ
3
3
0.1
R
τ
I D = 250µA
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
25
τ
C
τ
Ri (°C/W)
50
0.810
0.640
0.451
75
1
100 125 150 175
0.000260
0.001697
0.021259
τi (sec)
5
10