IRLR024Z International Rectifier, IRLR024Z Datasheet - Page 5

• Manufacturer Part Number: IRLR024Z
• Description: MOSFET N-CH 55V 16A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR024Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR024Z

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0.001
0.01
16
14
12
10
0.1
10
8
6
4
2
0
1
1E-006
Fig 9. Maximum Drain Current vs.
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.02
0.20
0.01
0.10
0.05
Case Temperature
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
2.5
2.0
1.5
1.0
0.5
1
Ci= i/Ri
Fig 10. Normalized On-Resistance
-60 -40 -20 0
0.001
R
1
R
I D = 5.0A
V GS = 5.0V
1
τ
2
τ
R
T J , Junction Temperature (°C)
2
vs. Temperature
2
R
2
τ
C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
20 40 60 80 100 120 140 160 180
τ
Ri (°C/W) τi (sec)
2.354
1.926
0.01
0.000354
0.001779
5
0.1