IRFR120Z International Rectifier, IRFR120Z Datasheet - Page 4

• Manufacturer Part Number: IRFR120Z
• Description: MOSFET N-CH 100V 8.7A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR120Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 25V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR120Z

4
100.0
10.0
500
400
300
200
100
1.0
0.1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
T J = 175°C
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Coss
Crss
Ciss
f = 1 MHZ
10
T J = 25°C
1.0
V GS = 0V
1.5
100
1000
100
0.1
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
Fig 6. Typical Gate Charge Vs.
0
1
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 5.2A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
2
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 80V
VDS= 50V
VDS= 20V
10
4
FOR TEST CIRCUIT
SEE FIGURE 13
6
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100
100µsec
10msec
1msec
8
1000
10