IRF3711Z International Rectifier, IRF3711Z Datasheet - Page 4

• Manufacturer Part Number: IRF3711Z
• Description: MOSFET N-CH 20V 92A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3711Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 92A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2150pF @ 10V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3711Z

4
1000.0
100.0
10000
1000
10.0
100
1.0
0.1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 175°C
V SD , Source-toDrain Voltage (V)
V DS , Drain-to-Source Voltage (V)
0.5
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 25°C
1.0
Ciss
Coss
Crss
f = 1 MHZ
10
1.5
V GS = 0V
2.0
2.5
100
10000
1000
100
Fig 8. Maximum Safe Operating Area
10
12
10
1
8
6
4
2
0
Fig 6. Typical Gate Charge vs.
0
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 12A
Gate-to-Source Voltage
5
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
15
V DS = 15V
VDS= 10V
20
25
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10
30
10msec
100µsec
1msec
35
100
40