IRF7834 International Rectifier, IRF7834 Datasheet
IRF7834
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IRF7834 Summary of contents
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... Junction-to-Ambient R θJA Notes through … are on page 10 www.irf.com V DSS 30V 4.5m:@ Top View @ 10V GS @ 10V Typ. g ––– fg ––– IRF7834 HEXFET Power MOSFET R max Qg (typ.) DS(on) = 10V 29nC SO-8 Max. Units 30 V ± 160 2.5 W 1.6 0.02 W/° ...
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... IRF7834 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...
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... BOTTOM 2. 0.1 10 100 Fig 2. Typical Output Characteristics 1 20A 10V 1.0 0.5 4.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7834 VGS TOP 10V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V BOTTOM 2.5V 2.5V > 60µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( ...
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... IRF7834 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.0 100 150°C 10 25°C 1.0 0.1 0.2 0.4 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 Fig 6. Typical Gate Charge Vs. ...
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... τ J τ J τ τ τ 1 τ 2 τ 3 τ Ci= τi/Ri Ci i/Ri 0.001 0.01 0 Rectangular Pulse Duration (sec) IRF7834 250µ 100 125 150 Temperature ( °C ) τi (sec) Ri (°C/ 1.1659 0.000184 τ C τ 9.9439 0.153919 τ 4 τ 25.520 1.7486 3 4 13.380 49 Notes: 1. Duty Factor D = t1/t2 2 ...
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... IRF7834 125° 25°C 0 2.0 4.0 6 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage D.U 20V GS 0.01 Ω Fig 13a. Unclamped Inductive Test Circuit Fig 13b. Unclamped Inductive Waveforms 6 100 20A 8.0 10.0 25 Starting Junction Temperature (°C) Fig 13c. Maximum Avalanche Energy 15V ...
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... D.U.T. V Waveform DS Re-Applied G + Voltage - Inductor Curent ® HEXFET Power MOSFETs Vds + Vgs(th Qgs1 Qgs2 Fig 17. Gate Charge Waveform IRF7834 P.W. Period D = Period V =10V GS Body Diode Forward Current di/dt Diode Recovery dv/ Body Diode Forward Drop I Ripple ≤ for N-Channel Vgs Qgd Qgodr ...
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... IRF7834 Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) Q × × × V × × V × × V × ...
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... B H 0.25 [.010 0.10 [.004 6.46 [.255] 3X 1.27 [.050] DAT E CODE (YWW LAS T DIGIT YEAR WW = WEEK YWW XXXX LOT CODE F7101 PART NUMBER IRF7834 INCHES MILLIMETERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 ...
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... IRF7834 SO-8 Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.19mH ...