IRF1010EZ International Rectifier, IRF1010EZ Datasheet - Page 6
![MOSFET N-CH 60V 75A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF1010EZ
Manufacturer Part Number
IRF1010EZ
Description
MOSFET N-CH 60V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF1010EZL.pdf
(12 pages)
Specifications of IRF1010EZ
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 mOhm @ 51A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
2810pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF1010EZ
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Company
Part Number
Manufacturer
Quantity
Price
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Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
12V
V
V
G
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
Current Regulator
Q
.2 F
GS
t p
t p
50K
3mA
Current Sampling Resistors
I AS
D.U.T
.3 F
0.01
L
I
G
Q
Charge
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
Fig 14. Threshold Voltage vs. Temperature
400
350
300
250
200
150
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
0
-75 -50 -25
25
Fig 12c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
50
I D = 250µA
T J , Temperature ( °C )
vs. Drain Current
0
75
25
100
50
75
TOP
BOTTOM 51A
125
100 125 150 175
www.irf.com
150
I D
5.7A
9.1A
175