IRF6635 International Rectifier, IRF6635 Datasheet - Page 4

• Manufacturer Part Number: IRF6635
• Description: MOSFET N-CH 30V 32A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6635

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5970pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF6635
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
100000
10000
1000
1000
1000
100
100
100
0.1
Fig 6. Typical Transfer Characteristics
10
10
Fig 4. Typical Output Characteristics
1
1
0.1
1
1
V DS = 15V
≤ 60µs PULSE WIDTH
T J = 150°C
T J = 25°C
T J = -40°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.5V
1
2
C iss
C rss
C oss
f = 1 MHZ
10
10
≤ 60µs PULSE WIDTH
Tj = 25°C
3
TOP
BOTTOM
100
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
100
4
Fig 7. Normalized On-Resistance vs. Temperature
1000
100
1.5
1.0
0.5
10
30
25
20
15
10
Fig 9. Normalized Typical On-Resistance vs.
Fig 5. Typical Output Characteristics
5
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
20
I D = 32A
V DS , Drain-to-Source Voltage (V)
Drain Current and Gate Voltage
T J , Junction Temperature (°C)
60
1
2.5V
I D , Drain Current (A)
100
V GS = 4.5V
V GS = 10V
≤ 60µs PULSE WIDTH
Tj = 150°C
10
140
180
TOP
BOTTOM
100
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
T J = 25°C
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220
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
260