IRF7705GTRPBF International Rectifier, IRF7705GTRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7705GTRPBF
• Description: MOSFET P-CH 30V 8A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7705GTRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 88nC @ 10V
• Input Capacitance (ciss) @ Vds: 2774pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -8A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: -10V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 8 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 58 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7705GTRPBFTR

4
4000
3200
2400
1600
800
100
0.1
10
Fig 7. Typical Source-Drain Diode
0
1
0.2
Fig 5. Typical Capacitance Vs.
1
Drain-to-Source Voltage
-V
-V
0.4
DS
T = 150 C
SD
Forward Voltage
J
C iss
C oss
C rss
V
C
C
C
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
0.6
=
=
=
=
°
0V,
C
C
C
gs
gd
ds
+ C
+ C
10
0.8
f = 1MHz
gd ,
gd
T = 25 C
J
C
1.0
ds
°
SHORTED
V
GS
1.2
= 0 V
100
1.4
100
16
12
10
Fig 8. Maximum Safe Operating Area
8
4
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
10
8.0A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
DS
Q , Total Gate Charge (nC)
°
°
G
20
, Drain-to-Source Voltage (V)
1
30
BY R
40
V
V
DS(on)
DS
DS
=-24V
=-15V
50
10
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60
100us
1ms
10ms
70
100
80