MTP2P50E ON Semiconductor, MTP2P50E Datasheet

MOSFET P-CH 500V 2A TO-220AB

MTP2P50E

Manufacturer Part Number
MTP2P50E
Description
MOSFET P-CH 500V 2A TO-220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of MTP2P50E

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
1183pF @ 25V
Power - Max
75W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
6 Ohms
Forward Transconductance Gfs (max / Min)
0.5 S
Drain-source Breakdown Voltage
- 500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Power Dissipation
75 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MTP2P50EOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MTP2P50EG
Quantity:
200
Part Number:
MTP2P50EG
Manufacturer:
ON Semiconductor
Quantity:
950
Part Number:
MTP2P50EG
Manufacturer:
ON
Quantity:
100
Part Number:
MTP2P50EG
Manufacturer:
ON/安森美
Quantity:
20 000
MTP2P50E
Power MOSFET
2 Amps, 500 Volts
P−Channel TO−220
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 6
MAXIMUM RATINGS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage
Drain Current − Continuous
Drain Current
Drain Current
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
I
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 sec
L
This high voltage MOSFET uses an advanced termination scheme
Fast Recovery Diode
Robust High Voltage Termination
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Diode is Characterized for Use in Bridge Circuits
I
This is a Pb−Free Device*
DD
= 4.0 Apk, L = 10 mH, R
DSS
− Continuous
− Non−Repetitive (t
− Junction−to−Case
− Junction−to−Ambient
= 100 Vdc, V
and V
DS(on)
− Continuous @ 100°C
− Single Pulse (t
Rating
GS
J
= 25°C
Specified at Elevated Temperature
= 10 Vdc,
GS
p
≤ 10 ms)
(T
= 1.0 MW)
G
C
= 25 W)
= 25°C unless otherwise noted)
p
≤ 10 ms)
Symbol
T
V
V
V
R
R
J
V
E
I
P
DGR
GSM
, T
T
DSS
DM
I
I
qJC
qJA
GS
D
D
AS
D
L
stg
−55 to 150
Value
1.67
62.5
± 20
± 40
500
500
260
2.0
1.6
6.0
0.6
75
80
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
W
MTP2P50EG
1
2
Device
3
2 AMPERES, 500 VOLTS
MTP2P50E = Device Code
A
Y
WW
G
ORDERING INFORMATION
4
G
CASE 221A
TO−220AB
http://onsemi.com
R
STYLE 5
DS(on)
TO−220AB
(Pb−Free)
Package
P−Channel
= Assembly Location
= Year
= Work Week
= Pb−Free Package
D
AND PIN ASSIGNMENT
MARKING DIAGRAM
Publication Order Number:
= 6 W
Gate
S
1
2P50EG
AYWW
Drain
Drain
MTP
50 Units/Rail
4
2
Shipping
MTP2P50E/D
3
Source

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MTP2P50E Summary of contents

Page 1

... DS(on) P−Channel MARKING DIAGRAM AND PIN ASSIGNMENT 4 Drain 4 TO−220AB MTP CASE 221A 2P50EG STYLE 5 AYWW Gate Source 2 Drain MTP2P50E = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Package Shipping TO−220AB 50 Units/Rail (Pb−Free) Publication Order Number: MTP2P50E/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = 500 Vdc Vdc 500 Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 25° 3.5 3 2.5 2 1 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL CHARGE (nC) T Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...

Page 6

SINGLE PULSE T = 25° 100 0.1 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward ...

Page 7

... S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTP2P50E/D ...

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