2N7002LT1G ON Semiconductor, 2N7002LT1G Datasheet - Page 3

• Manufacturer Part Number: 2N7002LT1G
• Description: MOSFET N-CH 60V 115MA SOT-23
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of 2N7002LT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 115mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.00008 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.115 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Current, Drain: ±115 mA
• Package Type: SOT-23 (TO-236)
• Polarization: N-Channel
• Resistance, Drain To Source On: 7.5 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 40 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 80 Millimhos
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Forward, Diode: -1.5 VDC
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 7.5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 115mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Dc: 1009
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N7002LT1GOSTR

2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2.4
0.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 60
0
V
I
T
D
1.0
GS
A
= 200 mA
= 25°C
Figure 3. Temperature versus Static
= 10 V
- 20
2.0
V
Drain−Source On−Resistance
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
3.0
T, TEMPERATURE (°C)
+ 20
4.0
5.0
TYPICAL ELECTRICAL CHARACTERISTICS
+ 60
6.0
7.0
V
+ 100
8.0
GS
= 10 V
http://onsemi.com
9 V
8 V
7 V
6 V
5 V
4 V
3 V
9.0
+ 140
10
3
1.05
1.10
0.95
0.85
0.75
1.0
0.8
0.6
0.4
0.2
1.2
1.1
1.0
0.9
0.8
0.7
- 60
0
V
1.0
DS
Figure 4. Temperature versus Gate
= 10 V
Figure 2. Transfer Characteristics
- 20
2.0
V
GS
, GATE SOURCE VOLTAGE (VOLTS)
3.0
Threshold Voltage
T, TEMPERATURE (°C)
+ 20
4.0
5.0
- 55°C
+ 60
6.0
7.0
+ 100
V
I
D
8.0
DS
125°C
= 1.0 mA
= V
9.0
GS
25°C
+ 140
10