NTB75N03RT4G ON Semiconductor, NTB75N03RT4G Datasheet

NTB75N03RT4G

Manufacturer Part Number

NTB75N03RT4G

Description

MOSFET N-CH 25V 9.7A D2PAK

Manufacturer

ON Semiconductor

Datasheet

1.NTP75N03R.pdf (8 pages)

Specifications of NTB75N03RT4G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

8 mOhm @ 20A, 10V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

9.7A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

13.2nC @ 10V

Input Capacitance (ciss) @ Vds

1333pF @ 20V

Power - Max

1.25W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.008 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

27 S

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

75 A

Power Dissipation

1250 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTB75N03RT4GOS

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NTB75N03R, NTP75N03R

Power MOSFET

75 Amps, 25 Volts

N−Channel D

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1 inch pad size,

2. When surface mounted to an FR4 board using minimum recommended pad

June, 2006 − Rev. 4

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Thermal Resistance − Junction−to−Case

Total Power Dissipation @ T

Drain Current

Thermal Resistance − Junction−to−Ambient

Total Power Dissipation @ T

Drain Current − Continuous @ T

Thermal Resistance − Junction−to−Ambient

Total Power Dissipation @ T

Drain Current − Continuous @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

L = 1 mH, R

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

Planar HD3e Process for Fast Switching Performance

Low R

Low C

Low Gate Charge

Pb−Free Packages are Available

(Cu Area 1.127 in

size, (Cu Area 0.412 in

(Note 1)

(Note 2)

− Continuous @ T

− Single Pulse (t

= 30 V

DS(on)

iss

to Minimize Driver Loss

, V

= 25 W)

to Minimize Conduction Loss

Parameter

= 10 V

= 25°C

= 10 ms)

= 25°C

= 25°C Unless otherwise specified)

, I

= 25°C

= 12 A

= 25°C

PAK, TO−220

Symbol

, T

DSS

qJC

qJA

stg

−55 to

Value

1.68

74.4

2.08

12.6

1.25

71.7

±20

225

100

150

260

9.7

°C/W

Unit

°C

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Gate

P75N03RG

AYWW

Drain

ORDERING INFORMATION

DS(on)

xxxxxxx

MARKING DIAGRAMS

& PIN ASSIGNMENTS

CASE 221A

TO−220AB

STYLE 5

http://onsemi.com

75 AMPERES

Source

25 VOLTS

= 5.6 mW (Typ)

= Device Code

= Pb−Free Device

= Assembly Location

= Year

= Work Week

Publication Order Number:

Gate

75N03RG

AYWW

Drain

CASE 418B

Drain

NTB75N03R/D

PAK

Source

Related parts for NTB75N03RT4G

NTB75N03RT4G Summary of contents

Page 1

NTB75N03R, NTP75N03R Power MOSFET 75 Amps, 25 Volts 2 N−Channel D PAK, TO−220 Features • Planar HD3e Process for Fast Switching Performance • Low R to Minimize Conduction Loss DS(on) • Low C to Minimize Driver Loss iss • Low ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) = 250 Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( ...

Page 3

120 100 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.022 0.018 0.014 T = ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...

Page 6

... SINGLE PULSE 0.1 0.0001 0.001 ORDERING INFORMATION Device NTP75N03R NTB75N03R NTB75N03RG NTB75N03RT4 NTB75N03RT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTB75N03R, NTP75N03R SAFE OPERATING AREA SINGLE PULSE T = 25° ...

Page 7

... VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTB75N03R, NTP75N03R PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 8

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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