NTMS3P03R2G ON Semiconductor, NTMS3P03R2G Datasheet - Page 4

• Manufacturer Part Number: NTMS3P03R2G
• Description: MOSFET P-CH 30V 2.34A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMS3P03R2G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.34A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 24V
• Power - Max: 730mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 3.05 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMS3P03R2GOS

0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
6
5
4
3
2
1
0
1
0
T
V
Figure 3. On-Resistance vs. Gate-to-Source
J
GS
-V
= 25°C
V
-V
0.25
2
GS
= -6 V
Figure 1. On-Region Characteristics
DS
V
GS
GS
= -8 V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, GATE-TO-SOURCE VOLTAGE (VOLTS)
= -10 V
3
0.5
4
V
0.75
GS
= -5 V
V
Voltage
5
GS
1.6
1.4
1.2
0.8
0.6
V
1
GS
= -2.6 V
1
V
-50
TYPICAL ELECTRICAL CHARACTERISTICS
GS
6
= -4.8 V
1.25
= -2.8 V
V
I
V
D
GS
-25
Figure 5. On Resistance Variation with
GS
7
= -3.05 A
V
GS
= -4.6 V
= -10 V
1.5
V
T
V
GS
J
= -4.4 V
GS
V
8
, JUNCTION TEMPERATURE (°C)
I
T
V
D
0
GS
J
GS
= -3.6 V
= -3.2 V
= -3.0 A
= 25°C
1.75
= -3 V
http://onsemi.com
= -4 V
NTMS3P03R2
9
25
Temperature
10
2
50
4
0.12
0.09
0.08
0.07
0.06
0.05
0.11
0.1
75
6
5
4
3
2
1
0
1
1
Figure 4. On-Resistance vs. Drain Current and
T
100
V
J
DS
-V
= 25°C
GS
> = -10 V
2
Figure 2. Transfer Characteristics
125
, GATE-TO-SOURCE VOLTAGE (VOLTS)
-I
2
D
T
, DRAIN CURRENT (AMPS)
J
150
= 25°C
3
T
J
Gate Voltage
V
V
= 100°C
GS
GS
= -4.5 V
= -10 V
4
3
T
J
= -55°C
5
4
6
7
5