NTMS3P03R2G ON Semiconductor, NTMS3P03R2G Datasheet - Page 4
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NTMS3P03R2G
Manufacturer Part Number
NTMS3P03R2G
Description
MOSFET P-CH 30V 2.34A 8-SOIC
Manufacturer
ON Semiconductor
Datasheet
1.NTMS3P03R2.pdf
(7 pages)
Specifications of NTMS3P03R2G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
85 mOhm @ 3.05A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.34A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
750pF @ 24V
Power - Max
730mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Dual Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.085 Ohms
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 3.05 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTMS3P03R2GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMS3P03R2G
Manufacturer:
ON/安森美
Quantity:
20 000
Final Product/Process Change Notification #16142
AFFECTED DEVICE LIST
NTMS10P02R2
NTMS10P02R2G
NTMS3P03R2
NTMS3P03R2G
NTMS4503NR2
NTMS4503NR2G
NTMS4N01R2
NTMS4N01R2G
NTMS5P02R2
NTMS5P02R2G
NTMS5P02R2SG
NTMS7N03R2
NTMS7N03R2G
NTMD2C02R2
NTMD2C02R2G
NTMD2C02R2SG
NTMD2P01R2
NTMD2P01R2G
NTMD3P03R2
NTMD3P03R2G
NTMD4N03R2
NTMD4N03R2G
NTMD6N02R2
NTMD6N02R2G
NTMD6N03R2
NTMD6N03R2G
NTMD6N04R2G
NTMD6P02R2
NTMD6P02R2G
NTMD6P02R2SG
Issue Date: 20-Aug-2008
Rev.14 Jun 2007
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