MMSF7P03HDR2G ON Semiconductor, MMSF7P03HDR2G Datasheet

MMSF7P03HDR2G

Manufacturer Part Number

MMSF7P03HDR2G

Description

MOSFET P-CH 30V 7A 8-SOIC

Manufacturer

ON Semiconductor

Datasheet

1.MMSF7P03HDR2.pdf (8 pages)

Specifications of MMSF7P03HDR2G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

35 mOhm @ 5.3A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

75.8nC @ 6V

Input Capacitance (ciss) @ Vds

1680pF @ 24V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Single Quad Drain Triple Source

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.035 Ohms

Forward Transconductance Gfs (max / Min)

12 S

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

7 A

Power Dissipation

2.5 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Fall Time

53.6 ns, 55.2 ns

Minimum Operating Temperature

- 55 C

Rise Time

42.7 ns, 15.2 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

MMSF7P03HDR2G

Manufacturer:

Quantity:

3 322

Company:

Meier Automation Equipment Co., Limited

Part Number:

MMSF7P03HDR2G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 8
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MMSF7P03HD

Power MOSFET

7 A, 30 V, P−Channel SO−8

voltage, high speed switching applications where power efficiency is

important. Typical applications are DC−DC converters, and power

management in portable and battery powered products such as

computers, printers, cellular and cordless phones. They can also be

used for low voltage motor controls in mass storage products such as

disk drives and tape drives.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When mounted on 1 in square FR−4 or G−10 (V

February, 2006 − Rev. 7

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current

Source Current − Continuous @ T

Total Power Dissipation @ T

(Note 1)

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

L = 10 mH, R

Thermal Resistance, Junction−to−Ambient

Maximum Temperature for Soldering

These miniature surface mount devices are designed for use in low

Low R

Logic Level Gate Drive − Can Be Driven by Logic ICs

Miniature SO−8 Surface Mount Package − Saves Board Space

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

Mounting Information for SO−8 Package Provided

Pb−Free Package is Available

DSS

= 32 Vdc, I

= 30 Vdc, V

Specified at Elevated Temperature

DS(on)

= 25 W)

Provides Higher Efficiency and Extends Battery Life

Continuous @ T

= 10 Apk,

Rating

Single Pulse (t

= 5.0 Vdc,

= 25°C

= 25°C unless otherwise noted)

Preferred Device

= 25°C

Continuous

≤ 10 ms)

= 25°C

Symbol

, T

DSS

qJA

stg

= 10 V @ 10 seconds)

− 55 to 150

Value

± 20

500

260

7.0

2.3

2.5

°C/W

Unit

Vdc

Adc

Apk

Adc

°C

MMSF7P03HDR2G

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

MMSF7P03HDR2

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

7 A, 30 V − R

Device

(Note: Microdot may be in either location)

Source

Gate

ORDERING INFORMATION

S7P03 = Device Code

PIN ASSIGNMENT

http://onsemi.com

CASE 751

STYLE 12

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Top View

SO−8

(Pb−Free)

Package

SO−8

DS(on)

Publication Order Number:

P−Channel

2500 / Tape&Reel

= 35 mW

MMSF7P03HD/D

Drain

MARKING

DIAGRAM

Shipping

AYWWG

S7P03

†

Related parts for MMSF7P03HDR2G

MMSF7P03HDR2G Summary of contents

Page 1

... R 50 qJA °C T 260 MMSF7P03HDR2 MMSF7P03HDR2G = seconds) GS †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 0.25 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 12 3 3.7 V 3 4.5 V 4.3 V 8.0 4.1 V 6.0 4.0 2 0.2 0.4 0.6 0.8 1.0 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...

Page 6

The Forward Biased Safe Operating Area curve (Figure 12) defines the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS 1 0.5 0.2 0.1 0.1 0.0 5 0.02 0.0 0.01 1 SINGLE PULSE 0.00 1.0E−05 1.0E−04 1.0E−03 1 Figure 15. Diode Reverse Recovery Waveform MMSF7P03HD 0.0106 W 0.0431 W 0.1643 W 0.3507 W 0.4302 W ...

Page 8

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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