NTB75N06L ON Semiconductor, NTB75N06L Datasheet - Page 3

• Manufacturer Part Number: NTB75N06L
• Description: MOSFET N-CH 60V 75A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB75N06L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 37.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 92nC @ 5V
• Input Capacitance (ciss) @ Vds: 4370pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

140
120
100
160
0.016
0.012
0.008
0.004
1.8
1.6
1.4
1.2
0.8
0.6
80
60
40
20
0.02
0
1
2
−50
0
0
I
V
V
D
GS
V
GS
Figure 3. On−Resistance vs. Gate−to−Source
= 37.5 A
−25
GS
Figure 5. On−Resistance Variation with
= 5 V
Figure 1. On−Region Characteristics
= 10 V
V
= 5 V
DS
T
20
, DRAIN−TO−SOURCE VOLTAGE (V)
J
0
, JUNCTION TEMPERATURE (°C)
1
I
D
, DRAIN CURRENT (AMPS)
25
40
Temperature
V
V
GS
GS
50
V
T
T
T
= 7 V
= 8 V
Voltage
GS
J
J
J
2
= 100°C
= −55°C
= 25°C
= 6 V
60
V
75
GS
= 5 V
100
80
NTP75N06L, NTB75N06L
3
V
V
125
V
V
GS
GS
GS
GS
= 4.5 V
= 3.5 V
100
= 4 V
= 3 V
150
http://onsemi.com
175
4
120
3
100000
10000
1000
0.016
0.012
0.008
0.004
140
120
100
160
0.02
100
80
60
40
20
10
0
1.4
0
0
Figure 4. On−Resistance vs. Drain Current and
V
V
Figure 6. Drain−to−Source Leakage Current
V
DS
GS
GS
1.8
T
J
w 10 V
= 0 V
= 10 V
V
= 100°C
V
10
Figure 2. Transfer Characteristics
DS
20
GS
T
2.2
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
= 25°C
I
D
, DRAIN CURRENT (AMPS)
2.6
20
40
Gate Voltage
vs. Voltage
T
T
T
J
J
J
3
= 150°C
= 125°C
= 100°C
T
J
30
T
T
60
T
= −55°C
J
J
J
3.4
= −55°C
= 100°C
= 25°C
3.8
40
80
4.2
50
100
4.6
120
60
5