NTD50N03R-35G ON Semiconductor, NTD50N03R-35G Datasheet - Page 3
![MOSFET N-CH 25V 7.8A IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
NTD50N03R-35G
Manufacturer Part Number
NTD50N03R-35G
Description
MOSFET N-CH 25V 7.8A IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD50N03R.pdf
(8 pages)
Specifications of NTD50N03R-35G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 30A, 11.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
7.8A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 11.5V
Input Capacitance (ciss) @ Vds
750pF @ 12V
Power - Max
1.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak (3 straight short leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.019 Ohms
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
45 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
6. Switching characteristics are independent of operating junction temperatures.
SWITCHING CHARACTERISTICS (Note 6)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
ELECTRICAL CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
Parameter
(continued) (T
Symbol
t
t
t
t
Q
V
d(on)
d(off)
d(on)
d(off)
t
R
L
L
L
RR
t
t
t
t
t
t
SD
RR
a
b
G
r
f
r
f
S
D
G
J
http://onsemi.com
= 25°C unless otherwise noted)
NTD50N03R
V
V
GS
V
V
I
GS
S
GS
GS
I
I
D
D
= 0 V, dI
= 30 A
3
= 30 A, R
= 11.5 V, V
= 30 A, R
Test Condition
= 0 V,
= 4.5 V, V
I
Ta = 25C
S
= 30 A
S
/dt = 100 A/ms,
G
G
DS
T
DS
= 3.0 W
= 3.0 W
T
J
J
= 15 V,
= 125°C
= 15 V,
= 25°C
Min
0.85
0.71
10.5
2.49
0.02
3.46
3.75
11.2
Typ
8.2
9.6
6.8
5.0
4.0
84
15
24
14
14
Max
1.1
Unit
nC
nH
ns
ns
ns
V
W