NTD78N03-35G ON Semiconductor, NTD78N03-35G Datasheet

MOSFET N-CH 25V 11.4A IPAK

NTD78N03-35G

Manufacturer Part Number
NTD78N03-35G
Description
MOSFET N-CH 25V 11.4A IPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD78N03-35G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 78A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
11.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 4.5V
Input Capacitance (ciss) @ Vds
2250pF @ 12V
Power - Max
1.4W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak (3 straight short leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.5 Ohms
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
78 A
Power Dissipation
64 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NTD78N03
Power MOSFET
25 V, 78 A, Single N−Channel, DPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
2. Surface−mounted on FR4 board using the minimum recommended pad size.
MAXIMUM RATINGS
THERMAL RESISTANCE
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 6
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Continuous Drain
Current (R
Power Dissipation
(R
Pulsed Drain Current
Current Limited by Package
Drain to Source dV/dt
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
L = 5.0 mH, I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
Junction−to−Case (Drain)
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
Low R
Optimized Gate Charge
Pb−Free Packages are Available
Desktop VCORE
DC−DC Converters
Low Side Switch
sq [1 oz] including traces).
qJC
)
DS(on)
DD
qJC
L
= 24 V, V
)
(pk) = 17 A, R
Parameter
GS
(T
Steady
= 10 V,
J
State
= 25°C unless otherwise noted)
G
t
= 25 W)
p
= 10 ms
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
C
A
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
I
Symbol
T
DmaxPkg
V
dV/dt
R
R
R
J
V
E
I
P
P
P
, T
T
DSS
DM
I
I
I
I
qJC
qJA
qJA
GS
D
D
D
AS
S
D
D
D
L
stg
−55 to 175
Value
722.5
"20
14.8
11.5
11.4
1.95
210
260
110
2.3
8.8
1.4
8.0
25
78
56
64
45
78
65
1
°C/W
Unit
V/ns
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
Gate
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
CASE 369AA
1
(Bend Lead)
1 2
V
Drain
Drain 3
STYLE 2
(BR)DSS
25 V
DPAK
4
2
3
Source
ORDERING INFORMATION
G
Y
WW
78N03 = Device Code
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
http://onsemi.com
Gate
(Straight Lead)
CASE 369D
R
1
6.5 @ 4.5 V
= Year
= Work Week
= Pb−Free Package
4.6 @ 10 V
1
STYLE 2
Drain
DS(on)
Drain
DPAK
2
D
4
2
3
Publication Order Number:
S
3
Source
TYP
4
Gate
N−Channel
(Straight Lead)
CASE 369AD
1
NTD78N03/D
Drain
Drain
1
I
IPAK
4
D
2
78 A
2 3
MAX
4
3
Source

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NTD78N03-35G Summary of contents

Page 1

... CASE 369AD CASE 369D IPAK DPAK (Straight Lead) (Straight Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 4 Drain Gate Drain Source Source Gate Drain Source Y = Year WW = Work Week 78N03 = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD78N03/D ...

Page 2

... Reverse Recovery Time PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. NTD78N03 (T = 25°C unless otherwise noted) J Symbol Test Condition = 250 mA V ...

Page 3

... I , DRAIN CURRENT (A) D Figure 3. On−Resistance versus Drain Current and Temperature 4 2.5 2 1.5 1 0.5 0 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTD78N03 160 ≥ 150 DS 3.8 V 140 130 3.6 V 120 110 100 3 3 25° 25° 2 Figure 2 ...

Page 4

... SINGLE PULSE T = 25° LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTD78N03 25° iss 2 C oss Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge ...

Page 5

... Figure 14. Thermal Response − Various Duty Cycles ORDERING INFORMATION Order Number NTD78N03 NTD78N03G NTD78N03T4 NTD78N03T4G NTD78N03−1 NTD78N03−1G NTD78N03−35 NTD78N03−35G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD78N03 di/ ...

Page 6

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD78N03 PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE A SEATING −T− PLANE SOLDERING FOOTPRINT* 6.20 3 ...

Page 7

... D2 4.80 −−− E 6.35 6.73 E2 4.70 −−− E3 4.45 5.46 e 2.28 BSC D2 L 3.40 3.60 L1 −−− 2.10 L2 0.89 1.27 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD78N03/D ...

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