NTHD5904NT3 ON Semiconductor, NTHD5904NT3 Datasheet - Page 5

• Manufacturer Part Number: NTHD5904NT3
• Description: MOSFET N-CH 20V 2.5A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD5904NT3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 465pF @ 16V
• Power - Max: 640mW
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

e1
H
E
0.457
0.018
8
1
7
2
0.026
D
0.66
e
6
3
5
4
Basic
2.032
0.08
0.711
0.028
b
E
A
*For additional information on our Pb−Free strategy and soldering
SCALE 20:1
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
q
c
0.05 (0.002)
0.635
0.025
SOLDERING FOOTPRINT*
inches
PACKAGE DIMENSIONS
mm
L
http://onsemi.com
CASE 1206A−03
NTHD5904N
5
4
ChipFET]
ISSUE G
6
3
STYLE 2:
5
PIN 1. SOURCE 1
7
2
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
8
1
0.457
0.018
0.635
0.025
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
DIM
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
SURFACE.
H
e1
A
b
D
E
L
q
c
e
E
0.026
0.66
1.00
0.25
0.10
2.95
1.55
0.28
1.80
MIN
MILLIMETERS
0.65 BSC
0.55 BSC
5° NOM
NOM
2.032
1.05
0.30
0.15
3.05
1.65
0.35
1.90
0.08
Style 2
0.254
0.010
MAX
1.10
0.35
0.20
3.10
1.70
0.42
2.00
SCALE 20:1
0.039
0.010
0.004
0.061
0.071
0.116
0.011
MIN
0.025 BSC
0.022 BSC
INCHES
5° NOM
1.092
0.043
0.041
0.012
0.006
0.120
0.065
0.014
0.075
NOM
inches
mm
0.178
0.007
0.043
0.014
0.008
0.122
0.067
0.017
0.079
MAX