NTJS3157NT4G ON Semiconductor, NTJS3157NT4G Datasheet
NTJS3157NT4G
Specifications of NTJS3157NT4G
Related parts for NTJS3157NT4G
NTJS3157NT4G Summary of contents
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NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low R • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline ( mm) for Maximum Circuit Board Utilization, Same ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...
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TYPICAL PERFORMANCE CURVES 25° 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.25 0.2 ...
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TYPICAL PERFORMANCE CURVES 1400 1200 C iss 1000 800 600 C rss 400 200 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE ...
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... ORDERING INFORMATION Device NTJS3157NT1 NTJS3157NT1G NTJS3157NT2 NTJS3157NT2G NTJS3157NT4 NTJS3157NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package SC−88 SC−88 (Pb−Free) SC−88 SC−88 (Pb−Free) SC−88 SC−88 (Pb−Free) http://onsemi ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...