NTJS4405NT4G ON Semiconductor, NTJS4405NT4G Datasheet

NTJS4405NT4G

Manufacturer Part Number

NTJS4405NT4G

Description

MOSFET N-CH 25V 1A SOT-363

Manufacturer

ON Semiconductor

Datasheet

1.NTJS4405NT1G.pdf (5 pages)

Specifications of NTJS4405NT4G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

350 mOhm @ 600mA, 4.5V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

1.5nC @ 4.5V

Input Capacitance (ciss) @ Vds

60pF @ 10V

Power - Max

630mW

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTJS4405NT4G

Manufacturer:

Quantity:

4 486

Current page: 1 of 5
Download datasheet (132Kb)

NTJS4405N

Small Signal MOSFET

25 V, 1.2 A, Single, N−Channel, SC−88

Features

•

Applications

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size

February, 2006 − Rev. 4

MAXIMUM RATINGS

Continuous Drain Current

THERMAL RESISTANCE RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode) (Note 1)

Lead Temperature for Soldering Purposes

ESD Rating − Machine Model

Junction−to−Lead – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient − t v 5 s (Note 1)

Advance Planar Technology for Fast Switching, Low R

Higher Efficiency Extending Battery Life

Pb−Free Packages are Available

Boost and Buck Converter

Load Switch

Battery Protection

(Cu area = 1.127 in sq [1 oz] including traces).

(Note 1)

(1/8″ from case for 10 s)

Rating

Steady

= 25°C unless otherwise noted)

t < 5 s

State

Steady State

t v 5 s

= 10 ms

= 25°C

= 75°C

Symbol

STG

DSS

qJA

qJL

−55 to

Value

"8.0

+150

0.80

0.63

0.89

Max

260

250

102

200

140

1.2

1.0

3.7

0.8

DS(on)

°C/W

Unit

°C

†For information on tape and reel specifications,

NTJS4405NT1

NTJS4405NT1G

NTJS4405NT4

NTJS4405NT4G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SC−88/SOT−363

(BR)DSS

25 V

CASE 419B

Device

(Note: Microdot may be in either location)

ORDERING INFORMATION

Gate

http://onsemi.com

249 mW @ 4.5 V

299 mW @ 2.7 V

(Pb−Free)

Package

= Device Code

= Date Code

= Pb−Free Package

Source

DS(on)

SC−88

Drain

MARKING DIAGRAM &

N−Channel

Publication Order Number:

PIN ASSIGNMENT

Typ

1 2 5 6

10,000 / Tape & Reel

3000 / Tape & Reel

TS M G

Shipping†

NTJS4405N/D

1.2 A

Max

Related parts for NTJS4405NT4G

NTJS4405NT4G Summary of contents

Page 1

... NTJS4405NT1G SC−88 3000 / Tape & Reel (Pb−Free) NTJS4405NT4 SC−88 10,000 / Tape & Reel NTJS4405NT4G SC−88 10,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...

Page 3

TYPICAL PERFORMANCE CURVES 4 3 5.5 V 4.5 V 3.5 3 2.5 2 1 0.5 1 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure ...

Page 4

TYPICAL PERFORMANCE CURVES 150 125 C iss 100 C rss rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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