NTD4810NH-1G ON Semiconductor, NTD4810NH-1G Datasheet - Page 5

• Manufacturer Part Number: NTD4810NH-1G
• Description: MOSFET N-CH 30V 8.6A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4810NH-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1225pF @ 12V
• Power - Max: 1.28W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
GATE--TO--SOURCE OR DRAIN--TO--SOURCE VOLTAGE (VOLTS)
100
100
2000
1750
1500
1250
1000
10
10
0.1
750
500
250
1
1
0
1
0.1
15
V
I
V
D
C
C
Figure 11. Maximum Rated Forward Biased
DD
GS
iss
rss
= 30 A
V
V
SINGLE PULSE
T
10
DS
= 15 V
= 11.5 V
C
t
GS
Figure 9. Resistive Switching Time
d(off)
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
V
= 25°C
= 20 V
DS
t
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
r
R
G
5
V
R
THERMAL LIMIT
PACKAGE LIMIT
= 0 V
, GATE RESISTANCE (OHMS)
GS
DS(on)
Safe Operating Area
1
0
LIMIT
V
GS
V
C
DS
rss
= 0 V
5
10
10
10
TYPICAL PERFORMANCE CURVES
15
t
t
d(on)
f
20
T
J
10 ms
1 ms
10 ms
100 ms
dc
= 25°C
http://onsemi.com
25
C
C
iss
oss
100
100
30
5
15
12
9
6
3
0
0
Figure 8. Gate- -To- -Source and Drain- -To- -Source
30
25
20
15
10
70
60
50
40
30
20
10
0.4
5
0
0
25
T
Q
2
J
1
= 25°C
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 12. Maximum Avalanche Energy vs.
GS
J
4
V
V
= 25°C
0.5
SD
DS
= 0 V
Q
Q
50
6
, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
G
2
Starting Junction Temperature
T
Voltage vs. Total Charge
, TOTAL GATE CHARGE (nC)
J
, JUNCTION TEMPERATURE (°C)
8
0.6
75
10
Q
T
12 14
0.7
100
0.8
16 18
125
0.9
20
V
GS
I
150
D
22 24
1.0
= 21 A
20
16
12
8
4
0
175
1.1