NTD4854N-1G ON Semiconductor, NTD4854N-1G Datasheet - Page 5

• Manufacturer Part Number: NTD4854N-1G
• Description: MOSFET N-CH 25V 15.7A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4854N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 15.7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 49.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4600pf @ 12V
• Power - Max: 1.43W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
100
100
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
0.1
10
10
500
1
1
0.1
1
0
0
V
I
V
V
SINGLE PULSE
T
D
Figure 11. Maximum Rated Forward Biased
DD
GS
C
C
GS
= 15 A
V
rss
= 25°C
DS
= 10 V
2.5
= 10 V
C
= 20 V
C
Figure 9. Resistive Switching Time
DRAIN--TO--SOURCE VOLTAGE (VOLTS)
iss
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
oss
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
R
G
R
THERMAL LIMIT
PACKAGE LIMIT
, GATE RESISTANCE (OHMS)
5
DS(on)
Safe Operating Area
1
7.5
LIMIT
10
10
12.5
10
TYPICAL PERFORMANCE CURVES
15
V
T
10 ms
100 ms
1 ms
10 ms
GS
dc
J
= 25°C
17.5
http://onsemi.com
t
t
t
t
= 0 V
d(off)
r
f
d(on)
100
100
20
5
360
320
280
240
200
160
120
30
25
20
15
10
80
40
12
10
5
0
0
0.5
8
6
4
2
0
25
0
Figure 8. Gate- -To- -Source and Drain- -To- -Source
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 12. Maximum Avalanche Energy vs.
Q
GS
J
1
V
= 25°C
10
SD
= 0 V
50
, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
T
Q
J
Q
0.6
, JUNCTION TEMPERATURE (°C)
20
2
G
Voltage vs. Total Charge
, TOTAL GATE CHARGE (nC)
75
30
Q
T
100
0.7
40
50
V
125
GS
0.8
60
I
V
T
D
J
DD
I
150
= 30 A
= 25°C
D
= 15 V
= 26 A
70
175
0.9
80