NTF6P02T3G ON Semiconductor, NTF6P02T3G Datasheet - Page 2
![MOSFET P-CH 20V 10A SOT223](/photos/5/51/55183/sot-223_3leads_tab__318e-04_sml.jpg)
NTF6P02T3G
Manufacturer Part Number
NTF6P02T3G
Description
MOSFET P-CH 20V 10A SOT223
Manufacturer
ON Semiconductor
Datasheet
1.NTF6P02T3G.pdf
(6 pages)
Specifications of NTF6P02T3G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
1200pF @ 16V
Power - Max
8.3W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.044 Ohms
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 10 A
Power Dissipation
8.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTF6P02T3GOS
NTF6P02T3GOS
NTF6P02T3GOSTR
NTF6P02T3GOS
NTF6P02T3GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTF6P02T3G
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
Company:
Part Number:
NTF6P02T3G
Manufacturer:
ONSEMI
Quantity:
37 555
Final Product/Process Change Notification #16003
QUALIFICATION PLAN:
Deviec: PZT751T1G
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
IOL Ta=25C, delta Tj=100C max, Ton=Toff=3.5 min, 8500 c
HTRB 150C, Bias=80% rated Vr, 1008 hrs
Device: SMBF1066T1
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
IOL Ta=25C, delta Tj=100C max, Ton=Toff=3.5 min, 8500 c
HTRB 150C, Bias=80% rated Vr, 1008 hrs
Device: NIF9N05CLT1
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
HTGB 150C, Bias=100% rated gate V, 1008 hrs
Device: NIF5003NT1G
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
HTGB 150C, Bias=100% rated gate V, 1008 hrs
Device: NTF3055L08T1G
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
HTGB 150C, Bias=100% rated gate V, 1008 hrs
Device: MCR08MT1G
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 504 hrs
TC Ta=-65/+150C, 500 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
IOL Ta=25C, delta Tj=100C max, Ton=Toff=3.5 min, 7500 c
HTRB 150C, Bias=80% rated Vr, 504 hrs
ELECTRICAL CHARACTERISTIC SUMMARY:
No changes to electrical performance occurred.
CHANGED PART IDENTIFICATION:
Parts with date code of 721 or greater may be manufactured using the new BOM. Devices on
this notice will be rated at MSL1 260 at the expiration of this FPCN.
Issue Date: 02-Apr-2007
Rev.07-02-06
Results (Rej/SS)
0/248
0/252
0/252
0/252
0/252
0/252
0/252
0/252
0/252
0/252
0/248
0/252
0/252
0/252
0/252
0/252
0/252
0/252
0/252
0/252
0/252
0/252
0/252
0/252
0/252
0/252
0/252
Page 2 of 4