BAP1321-02,115 NXP Semiconductors, BAP1321-02,115 Datasheet - Page 4

• Manufacturer Part Number: BAP1321-02,115
• Description: DIODE PIN 60V 100MA SOD-523
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP1321-02,115

• Package / Case: SC-79, SOD-523
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 60V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.32pF @ 20V, 1MHz
• Resistance @ If, F: 1.3 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 715mW
• Configuration: Single
• Reverse Voltage: 60 V
• Forward Continuous Current: 100 mA
• Frequency Range: SHF
• Termination Style: SMD/SMT
• Carrier Life: 0.5 us
• Forward Voltage Drop: 0.95 V
• Maximum Diode Capacitance: 0.45 pF
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.3 Ohms
• Maximum Series Resistance @ Minimum If: 5 Ohms
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 715 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: I-IGIA
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Applications Frequency Range: SHF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1913-2; 934056560115; BAP1321-02 T/R

NXP Semiconductors
GRAPHICAL DATA
handbook, halfpage
handbook, halfpage
Silicon PIN diode
f = 100 MHz; T
(1) I
(2) I
Diode inserted in series with a 50
and biased via the analyzer Tee network.
T
Fig.4
amb
s 21
(
10
dB
( )
0.1
0.2
0.3
0.4
0.5
r D
F
F
10
= 25 C.
Fig.2
0
)
10
2
1
= 100 mA.
= 10 mA.
1
0
1
Insertion loss ( s
function of frequency; typical values.
j
= 25 C.
Forward resistance as a function of
forward current; typical values.
1
1
(1)
(2)
(3)
(4)
(3) I
(4) I
21
F
F
= 1 mA.
= 0.5 mA.
2
stripline circuit
) of the diode as a
10
2
I F (mA)
f (GHz)
MLD595
MLD591
10
3
Rev. 02 - 3 January 2008
2
handbook, halfpage
handbook, halfpage
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50
T
Fig.5
amb
s 21
(
dB
(fF)
500
C d
400
300
200
100
10
20
30
40
= 25 C.
)
0
0
2
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation ( s
of frequency; typical values.
j
= 25 C.
4
1
21
8
2
) of the diode as a function
12
2
BAP1321-02
Product specification
f (GHz)
16
V R (V)
stripline circuit.
MLD594
MLD592
20
4 of 7
3