BAP51-03,115 NXP Semiconductors, BAP51-03,115 Datasheet - Page 4

• Manufacturer Part Number: BAP51-03,115
• Description: DIODE PIN GP 50V 50MA SOD-323
• Manufacturer: NXP Semiconductors

Specifications of BAP51-03,115

• Package / Case: SC-76, SOD-323, UMD2
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
• Resistance @ If, F: 2.5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 500mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 50 mA
• Carrier Life: 0.55 us
• Forward Voltage Drop: 1.1 V
• Maximum Diode Capacitance: 0.35 pF @ 5 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 2.5 Ohm @ 10 mA
• Maximum Series Resistance @ Minimum If: 9 Ohm @ 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1922-2; 934055509115; BAP51-03 T/R

NXP Semiconductors
GRAPHICAL DATA
2004 Feb 11
handbook, halfpage
handbook, halfpage
General purpose PIN diode
T
Fig.2
(1) I
Diode inserted in series with a 50  stripline circuit and biased via the
analyzer Tee network.
T
Fig.4
|S 21 |
(dB)
j
amb
= 25 C; f = 100 MHz.
−0.5
−2.5
−1.5
(Ω)
r D
−2
−1
F
= 25 C.
10
2
0
5
2
1
= 10 mA.
10
0.5
−1
Forward resistance as a function of forward
current; typical values.
Insertion loss (S
function of frequency; typical values.
1
(2)
(1)
1.5
I
F
(2)
= 1 mA.
21
1

2
(3)
) of the diode as a
2
I F (mA)
2.5
(3) I
f (GHz)
MGS659
MGS322
F
= 0.5 mA.
10
3
4
handbook, halfpage
handbook, halfpage
T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
Fig.5
|S 21 |
(fF)
(dB)
C d
j
amb
= 25 C; f = 1 MHz.
−20
−25
500
400
300
200
100
−10
−15
−5
2
= 25 C.
0
0
0.5
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (S
frequency; typical values.
4
1
21
1.5

8
2
) of the diode as a function of
12
2
Product specification
2.5
BAP51-03
16
V R (V)
f (GHz)
MGS323
MGS660
20
3