BAP64-05,215 NXP Semiconductors, BAP64-05,215 Datasheet - Page 3

DIODE PIN 175V 100MA SOT-23

BAP64-05,215

Manufacturer Part Number
BAP64-05,215
Description
DIODE PIN 175V 100MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAP64-05,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Type
PIN - 1 Pair Common Cathode
Voltage - Peak Reverse (max)
175V
Current - Max
100mA
Capacitance @ Vr, F
0.35pF @ 20V, 1MHz
Resistance @ If, F
1.35 Ohm @ 100mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Dual Common Cathode
Reverse Voltage
175 V
Forward Continuous Current
100 mA
Frequency Range
SHF
Carrier Life
1.55 us
Forward Voltage Drop
1.1 V at 50 mA
Maximum Diode Capacitance
0.35 pF at 20 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
1.35 Ohms at 100 mA
Maximum Series Resistance @ Minimum If
40 Ohms at 0.5 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-1933-2
934055510215
BAP64-05 T/R
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
1999 Aug 19
Per diode
V
I
C
r
L
R
j
SYMBOL
R
SYMBOL
D
L
S
= 25 C unless otherwise specified.
F
Silicon PIN diode
d
th j-s
forward voltage
reverse current
diode capacitance
diode forward resistance
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
I
V
V
V
V
V
I
I
I
I
when switched from I
I
measured at I
F
F
F
F
F
R
R
R
R
R
R
= 50 mA
= 0.5 mA; f = 100 MHz; note 1
= 1 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 100 mA; f = 100 MHz; note 1
= 6 mA; R
= 175 V
= 20 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 20 V; f = 1 MHz
3
CONDITIONS
L
R
= 100 ;
= 3 mA
F
= 10 mA to
0.95
0.52
0.37
0.23
20
10
2
0.7
1.55
1.4
TYP.
VALUE
220
Product specification
BAP64-05
1.1
10
1
0.35
40
20
3.8
1.35
MAX.
UNIT
K/W
V
A
A
pF
pF
pF
s
nH
UNIT

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