HSMS-2810-TR1G Avago Technologies US Inc., HSMS-2810-TR1G Datasheet - Page 3
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HSMS-2810-TR1G
Manufacturer Part Number
HSMS-2810-TR1G
Description
DIODE SCHOTTKY GP LN 20V SOT-23
Manufacturer
Avago Technologies US Inc.
Datasheet
1.HSMS-2813-BLKG.pdf
(10 pages)
Specifications of HSMS-2810-TR1G
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Type
Schottky - Single
Voltage - Peak Reverse (max)
20V
Current - Max
1A
Capacitance @ Vr, F
1.2pF @ 0V, 1MHz
Resistance @ If, F
15 Ohm @ 5mA, 1MHz
Product
Schottky Diodes
Peak Reverse Voltage
20 V
Forward Continuous Current
1 A
Configuration
Single
Forward Voltage Drop
1 V @ 0.035 A
Maximum Reverse Leakage Current
0.2 uA @ 15 V
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Capacitance Ct
1.2pF
Diode Case Style
SOT-23
Breakdown Voltage
20V
Forward Voltage
550mV
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Diode Configuration
Single
Forward Current If Max
1A
Forward Voltage Vf Max
410mV
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
516-1813-2
HSMS-2810-TR1G
HSMS-2810-TR1G
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HSMS-2810-TR1G
Manufacturer:
AVAGO
Quantity:
15 600
Company:
Part Number:
HSMS-2810-TR1G
Manufacturer:
AVAGO
Quantity:
1 287
Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument effectively isolates
individual diode branches from the others, allowing ac‑
curate capacitance measurement of each branch or each
diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz.
Avago defines this measurement as “CM”, and it is equiva‑
lent to the capacitance of the diode by itself. The equiva‑
lent diagonal and adjacent capaci‑tances can then be cal‑
culated by the formulas given below.
In a quad, the diagonal capacitance is the capacitance be‑
tween points A and B as shown in the figure below. The
diagonal capacitance is calculated using the following
formula
The equivalent adjacent capacitance is the capacitance
between points A and C in the figure below. This capaci‑
tance is calculated using the following formula
This information does not apply to cross‑over quad di‑
odes.
3
C
C
C
C
DIAGONAL
DIAGONAL
ADJACENT
ADJACENT
R
R
j
j
=
=
= _______ + _______
= _______ + _______
= C
= C
C
C
C
C
8.33 X 10
8.33 X 10
1
1
1
1
1
1
x C
+ C
x C
+ C
+ ____________
+ ____________
I
I
b
b
+ I
+ I
2
2
2
2
–– + –– + ––
C
–– + –– + ––
C
1
1
s
s
2
2
-5
-5
C
C
C
C
nT
nT
1
1
C
C
3
3
1
3
3
1
x C
+ C
x C
+ C
3
3
1
C
1
C
4
4
4
4
4
4
Linear Equivalent Circuit Model Diode Chip
R
C
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
SPICE Parameters
R
where
I
I
T = temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-281x product,
please refer to Application Note AN1124.
b
s
S
j
j
= saturation current (see table of SPICE parameters)
= externally applied bias current in amps
=
= junction capacitance (see Table of SPICE parameters)
= series resistance (see Table of SPICE parameters)
Parameter
8.33 X 10
C
I
B
E
R
P
P
M
I
N
BV
S
J0
G
V
S
B
T
R
I
S
b
+ I
s
-5
nT
Units
pF
eV
Ω
V
A
A
V
R
C
j
j
HSMS-281x
4.8E‑9
0.69
1.08
0.65
1.1
E‑5
0.5
25
10
2