HSMS-282C-BLKG Avago Technologies US Inc., HSMS-282C-BLKG Datasheet - Page 3

DIODE SCHOTTKY RF SER 15V SOT323

HSMS-282C-BLKG

Manufacturer Part Number
HSMS-282C-BLKG
Description
DIODE SCHOTTKY RF SER 15V SOT323
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of HSMS-282C-BLKG

Diode Type
Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (max)
15V
Current - Max
1A
Capacitance @ Vr, F
1pF @ 0V, 1MHz
Resistance @ If, F
12 Ohm @ 5mA, 1MHz
Package / Case
SC-70-3, SOT-323-3
Capacitance Ct
1pF
Diode Case Style
SOT-323
Pin Configuration
Series Pair
Breakdown Voltage Min
15V
Forward Voltage
340mV
Mounting Type
Surface Mount
Breakdown Voltage
15V
Capacitance
1pF
Current Rating
1A
Rohs Compliant
Yes
Forward Current If Max
10mA
Forward Voltage Vf Max
500mV
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1928
HSMS-282C-BLKG
C
3
Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument effectively isolates
individual diode branches from the others, allowing ac‑
curate capacitance measurement of each branch or each
diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz.
Avago defines this measurement as “CM”, and it is equiva‑
lent to the capacitance of the diode by itself. The equiva‑
lent diagonal and adjacent capaci‑tances can then be cal‑
culated by the formulas given below.
In a quad, the diagonal capacitance is the capacitance be‑
tween points A and B as shown in the figure below. The
diagonal capacitance is calculated using the following
formula
C
The equivalent adjacent capacitance is the capacitance
C
between points A and C in the figure below. This capaci‑
tance is calculated using the following formula
This information does not apply to cross‑over quad di‑
odes.
C
C
DIAGONAL
DIAGONAL
ADJACENT
ADJACENT
R
R
j
j
C
C
=
=
= _______ + _______
= _______ + _______
= C
= C
1
2
C
C
C
C
8.33 X 10
8.33 X 10
1
1
1
1
1
1
x C
+ C
x C
+ C
+ ____________
+ ____________
I
I
b
b
+ I
+ I
2
2
2
2
–– + –– + ––
C
–– + –– + ––
C
1
1
s
s
2
2
C
-5
-5
C
3
C
C
C
C
4
nT
nT
1
1
C
C
3
3
3
1
3
1
x C
+ C
x C
+ C
3
3
1
C
1
C
4
4
4
4
4
4
A
B
Linear Equivalent Circuit Model Diode Chip
R
C
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
SPICE Parameters
R
where
I
I
T = temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.
b
s
S
j
j
= saturation current (see table of SPICE parameters)
= externally applied bias current in amps
=
= junction capacitance (see Table of SPICE parameters)
= series resistance (see Table of SPICE parameters)
Parameter
8.33 X 10
C
B
E
I
P
R
P
M
N
I
BV
J0
S
G
V
S
B
T
R
I
S
b
+ I
s
-5
nT
Units
pF
eV
Ω
V
A
A
V
R
C
j
j
HSMS-282x
2.2E‑8
0.69
1E‑4
1.08
0.65
0.7
6.0
0.5
15
2

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